Synthesis of Bi and Bi2O3 Polymorphous Structure Using RPLD Method

Abstract

In the present work, Bismuth and Bismuth trioxide thin films were prepared using reactive pulse laser deposition technique. Different laser fluence was employed ranged from (1.8 J/cm2- 9.8 J/cm2) to investigatedthe physical properties. X –Ray diffraction result show a structure for the prepared films with monoclinic, tetragonal, and nonstoichiometric phases beside bismuth, while the atomic force microscopic result show grain size ranged from (33.48nm -131.6 nm) with different laser fluence. Optical properties result gave an energy gap value in the range of bismuth oxide (1.2-2.9 eV).

Keywords

• bismuth
• bismuth oxide
• reactive pulse laser deposition