Ultraviolet-visible electroluminescence from metal-oxide-semiconductor devices with CeO2 films on silicon

Chunyan Lv; Chen Zhu; Canxing Wang; Dongsheng Li; Xiangyang Ma; Deren Yang

doi:10.1063/1.4914355

AIP Advances (Mar 2015)

Ultraviolet-visible electroluminescence from metal-oxide-semiconductor devices with CeO2 films on silicon

Chunyan Lv,
Chen Zhu,
Canxing Wang,
Dongsheng Li,
Xiangyang Ma,
Deren Yang

Affiliations

Chunyan Lv: State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China
Chen Zhu: State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China
Canxing Wang: State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China
Dongsheng Li: State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China
Xiangyang Ma: State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China
Deren Yang: State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China

DOI: https://doi.org/10.1063/1.4914355
Journal volume & issue: Vol. 5, no. 3
pp. 037107 – 037107-6

Abstract

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We report on ultraviolet-visible (UV-Vis) electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with the CeO2 films annealed at low temperatures. At the same injection current, the UV-Vis EL from the MOS device with the 550 °C-annealed CeO2 film is much stronger than that from the counterpart with the 450 °C-annealed CeO2 film. This is due to that the 550 °C-annealed CeO2 film contains more Ce3+ ions and oxygen vacancies. It is tentatively proposed that the recombination of the electrons in multiple oxygen-vacancy–related energy levels with the holes in Ce 4f1 energy band pertaining to Ce3+ ions leads to the UV-Vis EL.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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