Temperature dependence of tunnel magnetoresistance in serial magnetic tunnel junctions
Dongyan Zhao,
Yubo Wang,
Jin Shao,
Yanning Chen,
Zhen Fu,
Qingtao Xia,
Shuaipeng Wang,
Xiuwei Li,
Guangzhi Dong,
Min Zhou,
Dapeng Zhu
Affiliations
Dongyan Zhao
Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing, China
Yubo Wang
Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing, China
Jin Shao
Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing, China
Yanning Chen
Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing, China
Zhen Fu
Beijing Chip Identification Technology Co., Ltd, Beijing, China
Qingtao Xia
Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China
Shuaipeng Wang
Beijing Chip Identification Technology Co., Ltd, Beijing, China
Xiuwei Li
Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing, China
Guangzhi Dong
Beijing Chip Identification Technology Co., Ltd, Beijing, China
Min Zhou
Beijing Chip Identification Technology Co., Ltd, Beijing, China
Dapeng Zhu
Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191, China
Magnetic tunnel junctions have been widely used in various applications, such as magnetic sensors and magnetic random-access memories. In the practical application of MTJs, they are usually used in series toward high sensitivity and high stability, especially for sensor applications. In this paper, serial MTJs devices on 8 in. wafers were fabricated. The temperature dependence of the tunnel magnetoresistance ratio, resistances in parallel and antiparallel configurations, and dynamic conductance were systematically investigated. The results of serial MTJs devices are consistent with a single MTJ device. This research suggests that serial MTJs can be directly used to investigate the magnetic tunneling properties of MTJ stacks.
