Enhancing reflected light filtration of photoelectronic detection system using polarization gating in scattering media
Quanyu Ji,
Yeshen Chen,
Weiliang Xu,
Zhibin Zou,
Haihua Fan,
Zefeng Chen,
Li Tao,
Xinming Li
Affiliations
Quanyu Ji
Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, People’s Republic of China
Yeshen Chen
Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, People’s Republic of China
Weiliang Xu
Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, People’s Republic of China
Zhibin Zou
Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, People’s Republic of China
Haihua Fan
Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, People’s Republic of China
Zefeng Chen
School of Optoelectronic Science and Engineering and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, People’s Republic of China
Li Tao
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, People’s Republic of China
Xinming Li
Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, People’s Republic of China
Photoelectronic technology has found extensive application due to its non-invasiveness, compact structure, and low cost. However, in semi-transparent media, the detection system based on reflection structure indiscriminately receives reflection light from different depths, resulting in the masking of target signals and a decrease in signal quality. To address this issue, selecting reflected light at different depths through polarization gates is an effective way. In this study, we analyzed a polarization gate-semi-infinite medium scattering model and investigated the impact of various factors on the reflected light filtering capability of the polarization gate, through Monte Carlo simulations and polystyrene microsphere scattering experiments. We found that the polarization gate can achieve a more effective control effect on the high polarization area on the reflective surface. Furthermore, the signal-to-noise ratio of the photoplethysmography sensor with an orthogonally polarized gate was improved from 0.72 to 2.36 dB. In other words, the polarization gate offers new insights into signal optimization through a structural design, which facilitates the development of wearable, low-power, and robust physiological signal measurement systems in the future.
