Analytical model of carrier mobility in a Polymer Field Effect Transistor

Abstract

In this paper, the carrier mobility analytical model in a POFET (Polymer Field Effect Transistor) channel is proposed. The model was developed on the basis of existing models and experimental results. The proposed model is universal because it encompasses the carrier mobility dependence on temperature, electric field and trap density in the POFET channel. The model is comparatively simple, easy for application and gives valuable results. According to the presented model, simulations of mobility as a function of the parameters of interest were performed. The obtained results are shown graphically. In comparison to accessible experimental results excellent correspondence was found. This model enables the calculation of simple POFET current-voltage I (V) characteristics.

Keywords

• carrier mobility model
• polymer transistor
• electrical characteristics
• simulation