Hierarchical Surface Structures and Large-Area Nanoscale Gratings in As<sub>2</sub>S<sub>3</sub> and As<sub>2</sub>Se<sub>3</sub> Films Irradiated with Femtosecond Laser Pulses
Dmitrii Shuleiko,
Stanislav Zabotnov,
Olga Sokolovskaya,
Maksim Poliakov,
Lidiya Volkova,
Tatiana Kunkel,
Evgeny Kuzmin,
Pavel Danilov,
Sergey Kudryashov,
Dmitrii Pepelayev,
Sergey Kozyukhin,
Leonid Golovan,
Pavel Kashkarov
Affiliations
Dmitrii Shuleiko
Faculty of Physics, Lomonosov Moscow State University, 1/2 Leninskie Gory, 119991 Moscow, Russia
Stanislav Zabotnov
Faculty of Physics, Lomonosov Moscow State University, 1/2 Leninskie Gory, 119991 Moscow, Russia
Olga Sokolovskaya
Faculty of Physics, Lomonosov Moscow State University, 1/2 Leninskie Gory, 119991 Moscow, Russia
Maksim Poliakov
Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, 16A Nagatinskaya St., 119991 Moscow, Russia
Lidiya Volkova
Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, 16A Nagatinskaya St., 119991 Moscow, Russia
Tatiana Kunkel
Moscow Institute of Physics and Technology, 9 Institutskiy Per., 141701 Dolgoprudny, Russia
Evgeny Kuzmin
Lebedev Physical Institute, The Russian Academy of Science, 53 Leninsky Avenue, 119991 Moscow, Russia
Pavel Danilov
Lebedev Physical Institute, The Russian Academy of Science, 53 Leninsky Avenue, 119991 Moscow, Russia
Sergey Kudryashov
Lebedev Physical Institute, The Russian Academy of Science, 53 Leninsky Avenue, 119991 Moscow, Russia
Dmitrii Pepelayev
Institute of Advanced Materials and Technologies, National Research University of Electronic Technology, 1 Shokina Sq., 124498 Zelenograd, Russia
Sergey Kozyukhin
Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky Avenue, 119991 Moscow, Russia
Leonid Golovan
Faculty of Physics, Lomonosov Moscow State University, 1/2 Leninskie Gory, 119991 Moscow, Russia
Pavel Kashkarov
Faculty of Physics, Lomonosov Moscow State University, 1/2 Leninskie Gory, 119991 Moscow, Russia
Chalcogenide vitreous semiconductors (ChVSs) find application in rewritable optical memory storage and optically switchable infrared photonic devices due to the possibility of fast and reversible phase transitions, as well as high refractive index and transmission in the near- and mid-infrared spectral range. Formed on such materials, laser-induced periodic surface structures (LIPSSs), open wide prospects for increasing information storage capacity and create polarization-sensitive optical elements of infrared photonics. In the present work, a possibility to produce LIPSSs under femtosecond laser irradiation (pulse duration 300 fs, wavelength 515 nm, repetition rate up to 2 kHz, pulse energy ranged 0.03 to 0.5 μJ) is demonstrated on a large (up to 5 × 5 mm2) area of arsenic sulfide (As2S3) and arsenic selenide (As2Se3) ChVS films. Scanning electron and atomic force microscopy revealed that LIPSSs with various periods (170–490 nm) and orientations can coexist within the same irradiated region as a hierarchical structure, resulting from the interference of various plasmon polariton modes generated under intense photoexcitation of nonequilibrium carriers within the film. The depth of the structures varied from 30 to 100 nm. The periods and orientations of the formed LIPSSs were numerically simulated using the Sipe–Drude approach. A good agreement of the calculations with the experimental data was achieved.