Optimization of Electron-Beam Evaporation Process Parameters for ZrN Thin Films by Plasma Treatment and Taguchi Method

Abstract

This study presents the optimal process parameters of zirconium nitride (ZrN) thin films prepared by ion-assisted deposition (IAD) technology combined with electron-beam evaporation based on plasma surface treatment and the Taguchi method. We use Minitab statistical software (Version 20.2.0) and L9 orthogonal array parameter design combined with the response surface method (RSM). The quadratic polynomial regression equation was optimized by the RSM. Based on the control factor screening test of the Taguchi method, we determined the most critical factor combination for the process and derived the optimized process parameters of the ZrN thin films. In the coating experiments, we successfully achieved the optimal combination of good refractive index, adequate residual stress, and lower surface roughness on B270 glass substrates. These results indicate that the optimized preparation process can simultaneously achieve several desirable properties, improving the performance and application of ZrN thin films. Furthermore, our research method not only reduces the number of experiments and costs but also improves the efficiency of research and development. By screening key factors and optimizing process parameters, we can find the best process parameter more rapidly, reduce the demand for expenses given materials and equipment costs, and contribute to improving the electron-beam evaporation process. According to the experimental results, it can be observed that under certain conditions, the properties of ZrN thin films reached optimal values. These results are highly useful for optimizing the process parameters of ZrN thin films and provide a basis for further improvement of the thin film properties.

Keywords

• zirconium nitride
• electron-beam evaporation
• ion-assisted deposition
• optimization parameters