AIP Advances (Jan 2016)

Perpendicular magnetic anisotropy in Mn2CoAl thin film

  • N. Y. Sun,
  • Y. Q. Zhang,
  • H. R. Fu,
  • W. R. Che,
  • C. Y. You,
  • R. Shan

DOI
https://doi.org/10.1063/1.4939934
Journal volume & issue
Vol. 6, no. 1
pp. 015006 – 015006-6

Abstract

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Heusler compound Mn2CoAl (MCA) is attracting more attentions due to many novel properties, such as high resistance, semiconducting behavior and suggestion as a spin-gapless material with a low magnetic moment. In this work, Mn2CoAl epitaxial thin film was prepared on MgO(100) substrate by magnetron sputtering. The transport property of the film exhibits a semiconducting-like behavior. Moreover, our research reveals that perpendicular magnetic anisotropy (PMA) can be induced in very thin Mn2CoAl films resulting from Mn-O and Co-O bonding at Mn2CoAl/MgO interface, which coincides with a recent theoretical prediction. PMA and low saturation magnetic moment could lead to large spin-transfer torque with low current density in principle, and thus our work may bring some unanticipated Heusler compounds into spintronics topics such as the domain wall motion and the current-induced magnetization reversal.