Nature Communications (Jun 2019)
Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch
Abstract
Designing core/shell nanowires with desired optoelectronic properties of III-V semiconductor alloys remains a challenge. Here, the authors report an engineering strategy to surmount strain-induced difficulties in the growth achieving highly strained cores with a sizeable change in their band gap.