Solar-blind deep-ultraviolet photodetectors based on solution-synthesized quasi-2D Te nanosheets

Cao Rui; Zhang Ye; Wang Huide; Zeng Yonghong; Zhao Jinlai; Zhang Liyuan; Li Jianqing; Meng Fanxu; Shi Zhe; Fan Dianyuan; Guo Zhinan

doi:10.1515/nanoph-2019-0539

Nanophotonics (Feb 2020)

Solar-blind deep-ultraviolet photodetectors based on solution-synthesized quasi-2D Te nanosheets

Cao Rui,
Zhang Ye,
Wang Huide,
Zeng Yonghong,
Zhao Jinlai,
Zhang Liyuan,
Li Jianqing,
Meng Fanxu,
Shi Zhe,
Fan Dianyuan,
Guo Zhinan

Affiliations

Cao Rui: Faculty of Information Technology Macau University of Science and Technology Avenida Wai Long, Taipa, Macau 999078, P.R. China
Zhang Ye: Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P.R. China
Wang Huide: Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P.R. China
Zeng Yonghong: Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P.R. China
Zhao Jinlai: Faculty of Information Technology Macau University of Science and Technology Avenida Wai Long, Taipa, Macau 999078, P.R. China
Zhang Liyuan: Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, P.R. China
Li Jianqing: Faculty of Information Technology Macau University of Science and Technology Avenida Wai Long, Taipa, Macau 999078, P.R. China
Meng Fanxu: Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P.R. China
Shi Zhe: Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P.R. China
Fan Dianyuan: Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P.R. China
Guo Zhinan: Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P.R. China

DOI: https://doi.org/10.1515/nanoph-2019-0539
Journal volume & issue: Vol. 9, no. 8
pp. 2459 – 2466

Abstract

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Solar-blind deep ultraviolet (DUV) photodetectors with high responsivity (R) and fast response speed are crucial for practical applications in astrophysical analysis, environmental pollution monitoring, and communication. Recently, 2D tellurium has emerged as a potential optoelectronic material because of its excellent photoelectric properties. In this study, solar-blind DUV photodetectors are demonstrated based on solution-synthesized and air-stable quasi-2D Te nanosheets (Te NSs). An R of 6.5 × 104 A/W at 261 nm and an external quantum efficiency (EQE) of higher than 2.26 × 106% were obtained, which are highest among most other 2D material-based solar-blind DUV photodetectors. Moreover, the photoelectric performance of the quasi-2D Te-based photodetector exhibited good stability even after ambient exposure for 90 days without any encapsulation. These results indicate that quasi-2D Te NSs provide a viable approach for developing solar-blind DUV photodetectors with ultrahigh R and EQE.

Published in Nanophotonics

ISSN: 2192-8606 (Print); 2192-8614 (Online)
Publisher: De Gruyter
Country of publisher: Germany
LCC subjects: Science: Physics
Website: https://www.degruyter.com/journal/key/nanoph/html#submit

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