npj Quantum Materials (Sep 2021)

Transport anomalies in the layered compound BaPt4Se6

  • Sheng Li,
  • Yichen Zhang,
  • Hanlin Wu,
  • Huifei Zhai,
  • Wenhao Liu,
  • Daniel Peirano Petit,
  • Ji Seop Oh,
  • Jonathan Denlinger,
  • Gregory T. McCandless,
  • Julia Y. Chan,
  • Robert J. Birgeneau,
  • Gang Li,
  • Ming Yi,
  • Bing Lv

DOI
https://doi.org/10.1038/s41535-021-00382-x
Journal volume & issue
Vol. 6, no. 1
pp. 1 – 7

Abstract

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Abstract We report a layered ternary selenide BaPt4Se6 featuring sesqui-selenide Pt2Se3 layers sandwiched by Ba atoms. The Pt2Se3 layers in this compound can be derived from the Dirac-semimetal PtSe2 phase with Se vacancies that form a honeycomb structure. This structure results in a Pt (VI) and Pt (II) mixed-valence compound with both PtSe6 octahedra and PtSe4 square net coordination configurations. Temperature-dependent electrical transport measurements suggest two distinct anomalies: a resistivity crossover, mimic to the metal-insulator (M-I) transition at ~150 K, and a resistivity plateau at temperatures below 10 K. The resistivity crossover is not associated with any structural, magnetic, or charge order modulated phase transitions. Magnetoresistivity, Hall, and heat capacity measurements concurrently suggest an existing hidden state below 5 K in this system. Angle-resolved photoemission spectroscopy measurements reveal a metallic state and no dramatic reconstruction of the electronic structure up to 200 K.