Design of a novel high-sensitive SOI-Junctionless BioFET overcoming sensitivity degradation problems

Abstract

Abstract For the first time, a new configuration of label-free junctionless semiconductor device is proposed to boost sensitivity in the identification of biomolecule specifies. Instead of creating the nanocavity inside the gate oxide, the nanocavity is created in the channel region which is very useful for the SOI junctionless technology based biodevice having a high current in all operating modes. For better control of the conduction mechanism, a hole trench is created under the channel region just inside the buried oxide. This will help to modulate the energy bands terminating in enhancing the sensing performance. Unlike the conventional biosensors needing a large-scale gate oxide thickness for trapping the biomolecules, the proposed biosensor can work for very low gate oxide thickness. The different biomolecules such as Biotin, Protein A, Bacteriophage T7, and Apomyoglobin have been utilized as targeted biomolecules for evaluating the sensitivity. Comparing the proposed biosensor with the conventional and other biosensors showed an enhanced sensing performance. Practical related issues during the process of sensing in terms of fill factor percentage, steric hindrance of biomolecules, and the charges of biomolecules have been focused in the recommended biodevice. All the results exhibited high superiority of performance of the suggested biodevice as compared to the conventional biosensor.

Keywords

• Biosensor
• Recessed nanocavity
• Hole trench
• Energy band modulation
• Junctionless
• Sensitivity