Nature Communications (Jan 2016)

Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2

  • Doohee Cho,
  • Sangmo Cheon,
  • Ki-Seok Kim,
  • Sung-Hoon Lee,
  • Yong-Heum Cho,
  • Sang-Wook Cheong,
  • Han Woong Yeom

DOI
https://doi.org/10.1038/ncomms10453
Journal volume & issue
Vol. 7, no. 1
pp. 1 – 6

Abstract

Read online

Controlled switching between states in materials with strong electronic correlations can form the basis for functional devices. Here, the authors use a scanning tunnelling microscope tip to switch between a Mott insulator state and a metallic state with charge-density-wave domains in 1T-TaS2.