Chemically Sensitive Photoluminescence of InGaN/GaN Nanowire Heterostructure Arrays

Konrad Maier; Andreas Helwig; Gerhard Müller; Martin Eickhoff

doi:10.3390/proceedings2019014043

Proceedings (Jun 2019)

Chemically Sensitive Photoluminescence of InGaN/GaN Nanowire Heterostructure Arrays

Konrad Maier,
Andreas Helwig,
Gerhard Müller,
Martin Eickhoff

Affiliations

Konrad Maier: Airbus Group Innovations, D-81663 Munich, Germany
Andreas Helwig: Airbus Group Innovations, D-81663 Munich, Germany
Gerhard Müller: Munich University of Applied Sciences and Mechatronics, D-80335 Munich, Germany
Martin Eickhoff: Institute of Solid-State Physics, University of Bremen, D-28359 Bremen, Germany

DOI: https://doi.org/10.3390/proceedings2019014043
Journal volume & issue: Vol. 14, no. 1
p. 43

Abstract

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III-nitride semiconductors (AlGaN, GaN and InGaN) have received considerable attention in various fields ranging from high-frequency and high-temperature electronics [1] to LED lighting technologies [2]. [...]

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Published in Proceedings

ISSN: 2504-3900 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: General Works
Website: http://www.mdpi.com/journal/proceedings

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