Peculiarity of plasmachemical etching of silicon plate edges of photoelectric converters

Abstract

Results of technological researches of plasmachemical reactor (PCR) for etching of silicon plate edges of photo-electric converters are described. Dependences of silicon etching speed on a discharge current, magnetic field intensity, quantity of the process able surface area and gases composition are resulted. Recommendations on technological use of PCR in an industrial production of photo-electric converters (PEC) are given. The productivity of PCR, developed in INR, is higher then productivity of the best foreign analogue of firm «Alkatel» more then in two times.

Keywords

• plasma-chemical reactor
• plasma-chemical etching
• monosilicon
• etching rate
• discharge current
• photovoltaic cells