Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy

Xiumei Zhang; Haiyan Nan; Shaoqing Xiao; Xi Wan; Xiaofeng Gu; Aijun Du; Zhenhua Ni; Kostya (Ken) Ostrikov

doi:10.1038/s41467-019-08468-8

Nature Communications (Feb 2019)

Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy

Xiumei Zhang,
Haiyan Nan,
Shaoqing Xiao,
Xi Wan,
Xiaofeng Gu,
Aijun Du,
Zhenhua Ni,
Kostya (Ken) Ostrikov

Affiliations

Xiumei Zhang: Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University
Haiyan Nan: Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University
Shaoqing Xiao: Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University
Xi Wan: Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University
Xiaofeng Gu: Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University
Aijun Du: Institute for Future Environments and School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology
Zhenhua Ni: Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University
Kostya (Ken) Ostrikov: Institute for Future Environments and School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology

DOI: https://doi.org/10.1038/s41467-019-08468-8
Journal volume & issue: Vol. 10, no. 1
pp. 1 – 10

Abstract

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Epitaxial growth of the two-dimensionally thin material flakes with effective layer number and shape calls for precise control over temperature and carrier gas. Here, authors report controlled epitaxial growth of the second layer vertically for MoS2, WS2, MoWS and MoWSSe compounds by reverse hydrogen gas flow chemical vapor epitaxy.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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