Journal of Materials Research and Technology (Jan 2024)

Effect of Si addition to Fe on the formation and growth of intermetallic compounds in Fe/Al composites

  • Xiaojun Zhang,
  • Kunyuan Gao,
  • Xiangyuan Xiong,
  • Xiuhua Hu,
  • Zhen Wang,
  • Jianzhu Wang,
  • Wu Wei,
  • Xiaolan Wu,
  • Shengping Wen,
  • Hui Huang,
  • Li Rong,
  • Zuoren Nie,
  • Dejing Zhou

Journal volume & issue
Vol. 28
pp. 1294 – 1302

Abstract

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The effects of Si addition to Fe on the formation and growth of intermetallic compounds (IMC) in Fe/Al composites were studied by Scanning electron microscopy (SEM), Energy Dispersive Spectroscopy (EDS) and electron backscatter diffraction (EBSD) techniques. The results showed that: when annealing time was 1 h, the critical IMC formation temperature of Pure Al/Pure Fe, Pure Al/Fe+0.82Si, Al+0.88Si/Pure Fe and Al+0.88Si/Fe+0.82Si were 440 °C, 480 °C, 520 °C and 620 °C, respectively. The major IMC phase formed in the four composites after heat treatments at 640 °C/1h and 640 °C/24h was the η phase (Fe2Al5), and a large number of θ phase (Fe4Al13) particles were present in the η phase for the Pure Al/Pure Fe sample. When Si element was added to Fe and Al, Fe3Al2Si3 phase and FeAl2Si phase were observed in the η phase. The thickness of the formed IMC layer in the four composites after heat treatment at 640 °C/1h was in the order: Pure Al/Pure Fe ≈ Pure Al/Fe+0.88Si > Al+0.888Si/Pure Fe ≈ Al+0.888Si/Fe+0.88Si. The growth activation energies of the IMC layer in the Pure Al/Pure Fe, Pure Al/Fe+0.82Si, Al+0.88Si/Pure Fe, Al+0.88Si/Fe+0.82Si samples were 76.1 kJ/mol, 276 kJ/mol, 349 kJ/mol and 519.6 kJ/mol, respectively. The effect of Si atoms on the formation of IMC was mainly by the interfacial enrichment mechanism and the new phase inhibition mechanism of FexAlySiz. The enrichment of Si at the interface of Al and Fe increased the growth activation energy and reduce the growth rate of IMC layer thickness. The formation of new FexAlySiz phase can inhibit the rapid growth of IMC phase along the C axis.

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