Department of Mining Engineering, Centre for IoT and AI Integration With Education-Industry-Agriculture, Kazi Nazrul University, Asansol, Burdwan, West Bengal, India
Anup Kumar Bhattacharjee
Department of Electronics and Communication Engineering, National Institute of Technology, Durgapur, West Bengal, India
Saurav Mallik
Department of Environmental Health, Harvard T. H. Chan School of Public Health, Boston, MA, USA
Haya Mesfer Alshahrani
Department of Information Systems, College of Computer and Information Sciences, Princess Nourah bint Abdulrahman University, P. O. Box 84428, Riyadh, Saudi Arabia
The paper investigates the terahertz performance of a mutually injection-locked multi-element high electron mobility avalanche transit time (HEM-ATT) source based on AlGaN/GaN two-dimensional electron gas (2-DEG). Utilizing a nanostrip patch type planar coupling circuit, mutual injection locking between adjacent elements is achieved. The paper provides a comprehensive analysis of the integrated power combining technique in the mutually injection-locked multi-element HEM-ATT oscillator. A ten-element mutually injection-locked integrated power combined source is designed for operation at 1.0 THz, and simulation studies are conducted to examine its DC, large-signal, and avalanche noise characteristics. The capability of generating a narrow-band terahertz wave is verified by introducing various levels of structural mismatches between the elements. Results indicate that the ten-element HEM-ATT oscillator can deliver 2.27 W peak power with a 17% DC to THz conversion efficiency at 1.0 THz. The average noise measure of the oscillator is found to be 12.54 dB. Additionally, the terahertz performance of the mutually injection-locked ten-element HEM-ATT oscillator is compared with other state-of-the-art THz sources to evaluate its potentiality as an excellent integrated THz radiator.
