Investigation of Terahertz 3D EM Simulation on Device Modeling and A New InP HBT Dispersive Inter-Electrode Impedance Extraction Method

Yapei Chen; Yong Zhang; Yuehang Xu; Yan Sun; Wei Cheng; Haiyan Lu; Fei Xiao; Ruimin Xu

doi:10.1109/ACCESS.2018.2865929

IEEE Access (Jan 2018)

Investigation of Terahertz 3D EM Simulation on Device Modeling and A New InP HBT Dispersive Inter-Electrode Impedance Extraction Method

Yapei Chen,
Yong Zhang,
Yuehang Xu,
Yan Sun,
Wei Cheng,
Haiyan Lu,
Fei Xiao,
Ruimin Xu

Affiliations

Yapei Chen: ORCiD; EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China
Yong Zhang: EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China
Yuehang Xu: ORCiD; EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China
Yan Sun: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China
Wei Cheng: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China
Haiyan Lu: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China
Fei Xiao: EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China
Ruimin Xu: EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China

DOI: https://doi.org/10.1109/ACCESS.2018.2865929
Journal volume & issue: Vol. 6
pp. 45772 – 45781

Abstract

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In this paper, a new 3-D electromagnetic (EM) simulation approach for heterojunction bipolar transistor (HBT) parameter extraction in terahertz band is presented. We introduce an inter-electrode impedance equivalent-circuit model with the concept of dispersive parameters and a more rigorous 3-D EM simulation parameter extraction method to avoid serious discrepancies between the simulated EM field distribution and the real EM field distribution of the device. Terahertz parasitic effects, including the EM field discretization and multi-finger device field sharing, are observed. Compared with the previous 3-D EM simulation-assisted model, the new model in this paper demonstrates better results for multi-finger indium phosphide HBTs.

Published in IEEE Access

ISSN: 2169-3536 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6287639

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