Design of Promising Uranyl(VI) Complexes Thin Films with Potential Applications in Molecular Electronics
Dr. César Raúl Monzón González,
Prof. Dr. María Elena Sánchez Vergara,
Prof. Dr. Milton Carlos Elías‐Espinosa,
M.Sc. Sergio Arturo Rodríguez‐Valencia,
Dr. Byron José López‐Mayorga,
M.Sc. José León Castillo‐Arroyave,
Dr. Rubén Alfredo Toscano,
Prof. Dr. Octavio Lozada Flores,
Dr. Cecilio Álvarez Toledano
Affiliations
Dr. César Raúl Monzón González
Instituto de Química Universidad Nacional Autónoma de México Circuito Exterior s/n. C.U. Delegación Coyoacán, C.P. 04510 Ciudad de México México
Prof. Dr. María Elena Sánchez Vergara
Facultad de Ingeniería Universidad Anáhuac México Avenida Universidad Anáhuac 46, Col. Lomas Anáhuac Huixquilucan Estado de México 52786 México
Prof. Dr. Milton Carlos Elías‐Espinosa
Tecnológico de Monterrey Escuela de Ingeniería y Ciencias Av. Carlos Lazo 100 Santa Fe, La Loma Ciudad de México México 01389
M.Sc. Sergio Arturo Rodríguez‐Valencia
Tecnológico de Monterrey Escuela de Ingeniería y Ciencias Carr. Lago de Guadalupe Km. 3.5, Col. Margarita Maza de Juárez Atizapán de Zaragoza Estado de México México 52926
Dr. Byron José López‐Mayorga
Escuela de Química Facultad de Ciencias Químicas y Farmacia Universidad de San Carlos de Guatemala 11 avenida Ciudad de Guatemala Guatemala 01012
M.Sc. José León Castillo‐Arroyave
Escuela de Química Facultad de Ciencias Químicas y Farmacia Universidad de San Carlos de Guatemala 11 avenida Ciudad de Guatemala Guatemala 01012
Dr. Rubén Alfredo Toscano
Instituto de Química Universidad Nacional Autónoma de México Circuito Exterior s/n. C.U. Delegación Coyoacán, C.P. 04510 Ciudad de México México
Prof. Dr. Octavio Lozada Flores
Facultad de Ingeniería Universidad Panamericana Augusto Rodin 498 Ciudad de México 03920 México
Dr. Cecilio Álvarez Toledano
Instituto de Química Universidad Nacional Autónoma de México Circuito Exterior s/n. C.U. Delegación Coyoacán, C.P. 04510 Ciudad de México México
Abstract In this work, it is proposed the development of organic semiconductors (OS) based on uranyl(VI) complexes. The above by means of the synthesis and the characterization of the complexes by Infrared spectroscopy, Nuclear magnetic resonance spectroscopy, mass spectrometry, and X‐ray diffraction. Films of these complexes were deposited and subsequently, topographic and structural characterization was carried out by Scanning Electron Microscopy, X‐ray diffraction, and Atomic Force Microscopy. Additionally, the nanomechanical evaluation was performed to know the stiffness of uranyl films using their modulus of elasticity. Also, the optical characterization took place in the devices and their bandgap value ranges between 2.40 and 2.93 eV being the minor for the film of the uranyl complex with the N on pyridine in position 4 (2 c). Finally, the electrical behavior of the uranyl(VI) films was evaluated, and important differences were obtained: the uranyl complex with the N on pyridine in position 2 (2 a) film is not influenced by changes in lighting and its current density is in the order of 10−3 A/cm2. The film with uranyl complex with the N on pyridine in position 3 (2 b) and 2 c presents a greater current flow under lighting conditions and two orders of magnitude larger than in film 2 a. In these films 2 b and 2 c, ohmic behavior occurs at low voltages, while at high voltages the charge transport changes to space‐charge limited current behavior.
