Crystal Growth by the Floating Zone Method of Ce-Substituted Crystals of the Topological Kondo Insulator SmB₆

Abstract

SmB6 is a mixed valence topological Kondo insulator. To investigate the effect of substituting Sm with magnetic Ce ions on the physical properties of samarium hexaboride, Ce-substituted SmB6 crystals were grown by the floating zone method for the first time as large, good quality single crystal boules. The crystal growth conditions are reported. Structural, magnetic and transport properties of single crystals of Sm1−xCexB6 (x=0.05, 0.10 and 0.20) were investigated using X-ray diffraction techniques, electrical resistivity and magnetisation measurements. Phase composition analysis of the powder X-ray diffraction data collected on the as-grown boules revealed that the main phase was that of the parent compound, SmB6. Substitution of Sm ions with magnetic Ce ions does not lead to long-range magnetic ordering in the Sm1−xCexB6 crystals. The substitution with 5% Ce and above suppresses the cross-over from bulk conductivity at high temperatures to surface-only conductivity at low temperatures.

Keywords

• crystal growth
• optical floating zone method
• SmB6
• Sm1-xCexB6
• topological insulator
• kondo insulator