Coexistence of two types of metal filaments in oxide memristors
D. Xu,
X. N. Shangguan,
S. M. Wang,
H. T. Cao,
L. Y. Liang,
H. L. Zhang,
J. H. Gao,
W. M. Long,
J. R. Wang,
F. Zhuge
Affiliations
D. Xu
School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
X. N. Shangguan
School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, China
S. M. Wang
Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
H. T. Cao
Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
L. Y. Liang
Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
H. L. Zhang
Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
J. H. Gao
Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
W. M. Long
Zhengzhou Research Institute of Mechanical Engineering, Zhengzhou 450001, China
J. R. Wang
School of Electronic and Information Engineering, Ningbo University of Technology, Ningbo 315211, China
F. Zhuge
Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
One generally considers the conducting filament in ZnO-based valence change memristors (VCMs) as an aggregation of oxygen vacancies. Recently, the transmission electron microscopy observation showed the filament is composed of a Zn-dominated ZnOx. In this study, careful analysis of the temperature dependence of the ON state resistance demonstrates that the formation/rupture of a Zn filament is responsible for the resistive switching in ZnO VCMs. Cu/ZnO/Pt memristive devices can be operated in both VCM and ECM (electrochemical metallization memristor) modes by forming different metal filaments including Cu, Zn and a coexistence of these two filaments. The device operation can be reversibly switched between ECM and VCM modes. The dual mode operation capability of Cu/ZnO/Pt provides a wide choice of select devices for constructing memristive crossbar architectures.
