Out-of-plane easy-axis in thin films of diluted magnetic semiconductor Ba1−xKx(Zn1−yMny)2As2
R. Wang,
Z. X. Huang,
G. Q. Zhao,
S. Yu,
Z. Deng,
C. Q. Jin,
Q. J. Jia,
Y. Chen,
T. Y. Yang,
X. M. Jiang,
L. X. Cao
Affiliations
R. Wang
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
Z. X. Huang
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
G. Q. Zhao
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
S. Yu
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
Z. Deng
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
C. Q. Jin
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
Q. J. Jia
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
Y. Chen
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
T. Y. Yang
Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, China
X. M. Jiang
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
L. X. Cao
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
Single-phased, single-oriented thin films of Mn-doped ZnAs-based diluted magnetic semiconductor (DMS) Ba1−xKx(Zn1−yMny)2As2 (x = 0.03, 0.08; y = 0.15) have been deposited on Si, SrTiO3, LaAlO3, (La,Sr)(Al,Ta)O3, and MgAl2O4 substrates, respectively. Utilizing a combined synthesis and characterization system excluding the air and further optimizing the deposition parameters, high-quality thin films could be obtained and be measured showing that they can keep inactive-in-air up to more than 90 hours characterized by electrical transport measurements. In comparison with films of x = 0.03 which possess relatively higher resistivity, weaker magnetic performances, and larger energy gap, thin films of x = 0.08 show better electrical and magnetic performances. Strong magnetic anisotropy was found in films of x = 0.08 grown on (La,Sr)(Al,Ta)O3 substrate with their magnetic polarization aligned almost solely on the film growth direction.
