AIP Advances
(Apr 2024)
A next-generation light-emitting device: ZOGAN LED with a heterogeneous p-layer composed of oxide and nitride semiconductors
Yung Ryel Ryu,
Sung Ki Hong,
E. Fred Schubert,
Dong-Min Jeon,
Dong-Soo Shin,
Jong-In Shim,
Sang-Mook Kim,
Jong Hyeob Baek
Affiliations
Yung Ryel Ryu
ZOGAN Semi, Pyeongtaek, Gyeonggi-do 17757, Republic of Korea
Sung Ki Hong
ZOGAN Semi, Pyeongtaek, Gyeonggi-do 17757, Republic of Korea
E. Fred Schubert
Future Chips Constellation, Department of Electrical, Computer, and System Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
Dong-Min Jeon
Department of Photonics and Nanoelectronics and BK21 FOUR ERICA-ACE, Hanyang University ERICA, Ansan, Gyeonggi-do 15588, Republic of Korea
Dong-Soo Shin
Department of Photonics and Nanoelectronics and BK21 FOUR ERICA-ACE, Hanyang University ERICA, Ansan, Gyeonggi-do 15588, Republic of Korea
Jong-In Shim
Department of Photonics and Nanoelectronics and BK21 FOUR ERICA-ACE, Hanyang University ERICA, Ansan, Gyeonggi-do 15588, Republic of Korea
Sang-Mook Kim
Korea Photonics Technology Institute, Gwangju 6100, Republic of Korea
Jong Hyeob Baek
Korea Photonics Technology Institute, Gwangju 6100, Republic of Korea
DOI
https://doi.org/10.1063/5.0192350
Journal volume & issue
Vol. 14,
no. 4
Abstract
Read online
We have developed a light-emitting device, called the ZOGAN light-emitting diode (LED). The ZOGAN LED is formed with the p-layer composed of both ZnO-based oxide and GaN-based nitride semiconductors. The ZOGAN LED shows the characteristics of light-emitting devices required for ultra-high-resolution displays.
WeChat QR code
Close
