Synthesis of Si and CdTe quantum dots and their combined use as down-shifting photoluminescent centers in Si solar cells

Abstract

Abstract This paper describes the synthesis and characterization of Si and CdTe quantum dots (QDs) and their use, either on their own or combined, as photoluminescent (PL) down-shifting nanostructured coatings aimed to enhance the photovoltaic efficiency of polycrystalline silicon solar cells. To this end, the front face of a set of silicon cells was coated with different volume ratios of the above-mentioned QDs, or some of its mixtures, dispersed in PMMA layers. Previously, the absorption and the PL (exc = 380 nm) response of the dispersions of the QDs were measured. It was observed that the PL response of the mixtures was strongly affected in location, spread, and intensity of the emission peak according to the volume ratio involved. As compared to the unmixed CdTe samples, a notorious red-shift of the main peak location was obtained for a couple of mixed QDs’ dispersions, which was one of the project objectives given that Si solar cells respond better to photons with wavelengths in the 650–700 nm range. This effect was confirmed in a set of polycrystalline Si solar cells covered with and without nanostructured PMMA/QDs layers tested under AM 1.5G solar simulator conditions. It was found that the use of the proposed mixtures of QDs gave an increase of 1.53% in solar cell power conversion efficiency.

Keywords

• Silicon solar cells
• Cadmium telluride
• Quantum dots
• Down-shifting