Advances in Condensed Matter Physics (Jan 2014)

Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 μm Technology

  • Enrique J. Tinajero-Perez,
  • Jesus Ezequiel Molinar-Solis,
  • Rodolfo Z. Garcia-Lozano,
  • Pedro Rosales-Quintero,
  • Jose M. Rocha-Perez,
  • Alejandro Diaz-Sanchez,
  • Arturo Morales-Acevedo

DOI
https://doi.org/10.1155/2014/632785
Journal volume & issue
Vol. 2014

Abstract

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The experimental results of the Fowler-Nordheim characterization using poly1-poly2 capacitors on CMOS ON Semi 0.5 μm technology are presented. This characterization allows the development, design, and characterization of a new current-mode analog nonvolatile memory. Experimental results of the memory cell architecture are presented and demonstrate the usefulness of the proposed architecture.