Kerr nonlinearity and group velocity dispersion of InGaAs/InP and GaAsSb/InP waveguides in the mid-infrared

Abstract

We report measurements of Kerr nonlinearity and group velocity dispersion in In0.53Ga0.47As/InP and GaAs0.51Sb0.49/InP ridge waveguides in the mid-infrared using four-wave mixing at λ ≈ 5 µm. Measured values of Kerr nonlinearity are significantly higher compared to those reported for any other materials systems suitable for building dielectric waveguides with low losses and low group velocity dispersion in the mid-infrared (λ ≈ 3–15 μm). Our measurements establish both In0.53Ga0.47As/InP and GaAs0.51Sb0.49/InP materials as promising platforms for the development of on-chip mid-infrared frequency comb generation and supercontinuum light sources.