Studying and Calculating the Radiation Damage Caused by the Solar Radiation Spectrum in the Crystal Structure of Semiconductor Components

Abstract

Space radiation environment has concerned about proper performance of electronic systems and equipment used in the space due to a variety of space radiations. The radiation hardening techniques are required to all parts of the system in such environment. Therefore careful studies should be done on the mechanism of radiation damage in these systems. Shielding is one of radiation hardening technique. The radiation effects on electronic components can be done using radiation simulating softwares. In this work, displacement damage, vacancies and ionization values in silicon and gallium arsenide with layers of metal as a shield have been calculated using TRIM software. The results showed that the more thickness and more elements with high atomic number of shield made more resistance to radiation. Thus, damage in electronic devices would be less. Also, the damages resulted from the incident beam of helium ions is much higher than that of hydrogen ions.

Keywords

• radiation damage
• displacement of atoms
• trim
• ionization
• semiconductor component