State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
Afshan Khaliq
College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, China
Muhammad Abid Anwar
State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
Tian Feng
State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
Khurram Shehzad
State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
Zongwen Li
State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
Yuda Zhao
State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
Bin Yu
State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou, China
This work presents an in-situ readout of the transient photoresponse of a graphene-oxide-semiconductor heterostructure by utilizing graphene’s field-effect coupling with the silicon photogate. The reported device which acts as a graphene charge-coupled device (GCCD) pixel is set into pre-avalanche condition by dynamic sinusoidal biasing and then exposed with pulsed illumination. The initial photo-ionized charge packet experiences pre-integration carrier multiplication, boosting the signal-to-noise ratio (SNR) before interacting with the surface traps and defects. The maximum multiplication factor of $\mathrm {\sim }8.5$ and responsivity of $\mathrm {350 A/W}$ are achieved. Arrhenius plots show the viability of operating the device at room temperature as thermal charge contribution is negligible. Moreover, a detailed discussion on reduced power consumption for such a sinusoidal charge-coupled device (CCD) drive concept is also incorporated. The presented technique paves the way for futuristic sinusoidally-driven graphene-silicon-based electron-multiplying CCDs with low-power surveillance and adaptive optics applications.
