Implementation of a Low Noise Amplifier With Self-Recovery Capability

Yanchen Liu; Caizhi Zhang; Tupei Chen; Deyu Kong; Rui Guo; J. J. Wang; Yuancong Wu; S. G. Hu; L. M. Rong; Qi Yu; Yang Liu

doi:10.1109/ACCESS.2019.2907524

IEEE Access (Jan 2019)

Implementation of a Low Noise Amplifier With Self-Recovery Capability

Yanchen Liu,
Caizhi Zhang,
Tupei Chen,
Deyu Kong,
Rui Guo,
J. J. Wang,
Yuancong Wu,
S. G. Hu,
L. M. Rong,
Qi Yu,
Yang Liu

Affiliations

Yanchen Liu: ORCiD; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Caizhi Zhang: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Tupei Chen: School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
Deyu Kong: ORCiD; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Rui Guo: ORCiD; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
J. J. Wang: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Yuancong Wu: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
S. G. Hu: ORCiD; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
L. M. Rong: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Qi Yu: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Yang Liu: ORCiD; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China

DOI: https://doi.org/10.1109/ACCESS.2019.2907524
Journal volume & issue: Vol. 7
pp. 43076 – 43083

Abstract

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In this paper, an RF low noise amplifier (LNA) with self-recovery capability has been designed and implemented. A degradation model of hot carrier injection (HCI) of n-channel MOSFETs is proposed to simulate the aging process of the RF circuits, and a method for monitoring the HCI degradation in the RF circuits has been developed. Self-recovery mechanism of the LNA is triggered automatically by monitoring the HCI degradation to compensate for the HCI degradation. With the self-recovery capability, the LNA can maintain its performance under HCI stress over time. The proposed LNA has been fabricated with a 0.13μm CMOS technology and the self-recovery capability has been experimentally demonstrated.

Published in IEEE Access

ISSN: 2169-3536 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6287639

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