A foundation for complex oxide electronics -low temperature perovskite epitaxy

Henrik H. Sønsteby; Erik Skaar; Øystein S. Fjellvåg; Jon E. Bratvold; Helmer Fjellvåg; Ola Nilsen

doi:10.1038/s41467-020-16654-2

Nature Communications (Jun 2020)

A foundation for complex oxide electronics -low temperature perovskite epitaxy

Henrik H. Sønsteby,
Erik Skaar,
Øystein S. Fjellvåg,
Jon E. Bratvold,
Helmer Fjellvåg,
Ola Nilsen

Affiliations

Henrik H. Sønsteby: Department of Chemistry, Center for Materials Science and Nanotechnology, University of Oslo, Blindern
Erik Skaar: Department of Chemistry, Center for Materials Science and Nanotechnology, University of Oslo, Blindern
Øystein S. Fjellvåg: Department for Neutron Materials Characterization, Institute for Energy Technology
Jon E. Bratvold: Department of Chemistry, Center for Materials Science and Nanotechnology, University of Oslo, Blindern
Helmer Fjellvåg: Department of Chemistry, Center for Materials Science and Nanotechnology, University of Oslo, Blindern
Ola Nilsen: Department of Chemistry, Center for Materials Science and Nanotechnology, University of Oslo, Blindern

DOI: https://doi.org/10.1038/s41467-020-16654-2
Journal volume & issue: Vol. 11, no. 1
pp. 1 – 7

Abstract

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Designing complex oxides with appreciable low-temperature synthesis remains a challenge. Here, the authors demonstrate an atomic layer deposition process for LaNiO3 to enable epitaxial thin films on LaAlO3 and SrTiO3 substrates deposited at 225 °C, with no annealing required to achieve good electronic properties.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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