In this work, the fabrication of wafer-level vacuum-packaged 3C-SiC on Si double- clamped beam resonators via glass–silicon anodic bonding using Ti-based vacuum gettering is reported. Open-loop resonance measurements are performed on the vacuum-packaged devices, showing Q-factor values up to 290,000, a process yield above 80%, and a maximum vacuum level around 10−2 mbar inside the Ti-gettered encapsulations.
