Multiple optical impacts of anion doping in epitaxial barium titanate films
M. Tyunina,
O. Vetokhina,
N. Nepomniashchaia,
O. Pacherova,
S. Cichon,
T. Kocourek,
M. Jelinek,
A. Dejneka
Affiliations
M. Tyunina
Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, P.O. Box 4500, FI-90014 Oulu, Finland
O. Vetokhina
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 18221 Prague, Czech Republic
N. Nepomniashchaia
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 18221 Prague, Czech Republic
O. Pacherova
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 18221 Prague, Czech Republic
S. Cichon
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 18221 Prague, Czech Republic
T. Kocourek
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 18221 Prague, Czech Republic
M. Jelinek
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 18221 Prague, Czech Republic
A. Dejneka
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 18221 Prague, Czech Republic
Multiple strong impacts of anion doping Λ (Λ = oxygen vacancy, nitrogen, or hydrogen) on the optical properties in the near-infrared to vacuum ultraviolet spectral range are experimentally revealed in cube-on-cube-type epitaxial perovskite BaTiO3−δΛδ films (δ ≤ 0.01) grown on (001)SrTiO3 substrates. Compared to the reference undoped films and bulk crystal, the anion-doped films exhibit massive changes of the index of refraction in the transparency range Δn of ∼0.1 to 0.2, a profound bandgap widening ΔEg of ∼0.3 eV to 0.4 eV, a dopant-specific near-edge absorption, and doping-induced interband transitions. Both the conduction-band uplift and the changes in the index of refraction are ascribed to the internal stress and electric field, which result from epitaxially controlled dopant locations in the [Ba–O](001) planes. The dopant-induced in-gap states are responsible for the near-edge absorption, whereas the dopant-induced conduction-band states are suggested to modify the interband transitions and the intrinsic elasto- and electro-optic coefficients.