Scientific Reports (May 2018)

Ultrafast magnetization modulation induced by the electric field component of a terahertz pulse in a ferromagnetic-semiconductor thin film

  • Tomoaki Ishii,
  • Hiromichi Yamakawa,
  • Toshiki Kanaki,
  • Tatsuya Miyamoto,
  • Noriaki Kida,
  • Hiroshi Okamoto,
  • Masaaki Tanaka,
  • Shinobu Ohya

DOI
https://doi.org/10.1038/s41598-018-25266-2
Journal volume & issue
Vol. 8, no. 1
pp. 1 – 6

Abstract

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Abstract High-speed magnetization control of ferromagnetic films using light pulses is attracting considerable attention and is increasingly important for the development of spintronic devices. Irradiation with a nearly monocyclic terahertz pulse, which can induce strong electromagnetic fields in ferromagnetic films within an extremely short time of less than ~1 ps, is promising for damping-free high-speed coherent control of the magnetization. Here, we successfully observe a terahertz response in a ferromagnetic-semiconductor thin film. In addition, we find that a similar terahertz response is observed even in a non-magnetic semiconductor and reveal that the electric-field component of the terahertz pulse plays a crucial role in the magnetization response through the spin-carrier interactions in a ferromagnetic-semiconductor thin film. Our findings will provide new guidelines for designing materials suitable for ultrafast magnetization reversal.