GROWTH OF ALUMINUM NITRIDE THIN FILMS VIA PEALD WITH VARIOUS PLASMA EXPOSITION DURATIONS

Abstract

Films of aluminum nitride were grown by the method ofplasma-activated ALD. The impact of duration of plasma exposure stage on the growth rate, composition and microstructures was analyzed. These samples were examined by IR spectroscopy, ellipsometry and X-ray analysis. It was found that, film thickness of AlN increases by the amount not more than 0.12 nm per cycle. Furthermore, it was found that the synthesis of crystalline films of aluminum nitride is possible under plasma exposure durations longer than 20 seconds.

Keywords

• атомно-слоевое осаждение
• пленки нитрида алюминия
• эллипсометрия
• ик-поглощение
• рентгеноструктурный анализ
• atomic layer deposition
• the aluminum nitride film
• ellipsometry
• ir absorption
• x-ray analysis