Journal of Telecommunications and Information Technology (Jun 2023)

Charge-pumping characterization of FILOX vertical MOSFETs

  • Grzegorz Głuszko,
  • Lidia Łukasiak,
  • Enrico Gili,
  • Peter Ashburn

DOI
https://doi.org/10.26636/jtit.2007.3.833
Journal volume & issue
no. 3

Abstract

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This paper presents for the first time the results of charge-pumping (CP) measurements of FILOX vertical transistors. The aim of these measurements is to provide information on the density of interface traps at the Si-SiO2 interface fabricated in a non-standard process. Flat-band and threshold voltage, as well as density of interface traps are determined. Good agreement between threshold-voltage values obtained from CP and I-V measurements is observed.

Keywords