Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga2O3 Polymorphs

Alexander Y. Polyakov; Eugene B. Yakimov; Vladimir I. Nikolaev; Alexei I. Pechnikov; Andrej V. Miakonkikh; Alexander Azarov; In-Hwan Lee; Anton A. Vasilev; Anastasiia I. Kochkova; Ivan V. Shchemerov; Andrej Kuznetsov; Stephen J. Pearton

doi:10.3390/cryst13091400

Crystals (Sep 2023)

Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga2O3 Polymorphs

Alexander Y. Polyakov,
Eugene B. Yakimov,
Vladimir I. Nikolaev,
Alexei I. Pechnikov,
Andrej V. Miakonkikh,
Alexander Azarov,
In-Hwan Lee,
Anton A. Vasilev,
Anastasiia I. Kochkova,
Ivan V. Shchemerov,
Andrej Kuznetsov,
Stephen J. Pearton

Affiliations

Alexander Y. Polyakov: Department of Semiconductor Electronics and Physics of Semiconductors, National University of Science and Technology MISIS, Leninsky pr. 4, Moscow 119049, Russia
Eugene B. Yakimov: Department of Semiconductor Electronics and Physics of Semiconductors, National University of Science and Technology MISIS, Leninsky pr. 4, Moscow 119049, Russia
Vladimir I. Nikolaev: Department of Semiconductor Electronics and Physics of Semiconductors, National University of Science and Technology MISIS, Leninsky pr. 4, Moscow 119049, Russia
Alexei I. Pechnikov: Department of Semiconductor Electronics and Physics of Semiconductors, National University of Science and Technology MISIS, Leninsky pr. 4, Moscow 119049, Russia
Andrej V. Miakonkikh: Valiev Institute of Physics and Technology, Russian Academy of Sciences (Valiev IPT RAS), Nahimovsky Ave, 36(1), Moscow 117218, Russia
Alexander Azarov: Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, N-0316 Oslo, Norway
In-Hwan Lee: Department of Materials Science and Engineering, Korea University, Anamro 145, Seoul 02841, Republic of Korea
Anton A. Vasilev: Department of Semiconductor Electronics and Physics of Semiconductors, National University of Science and Technology MISIS, Leninsky pr. 4, Moscow 119049, Russia
Anastasiia I. Kochkova: Department of Semiconductor Electronics and Physics of Semiconductors, National University of Science and Technology MISIS, Leninsky pr. 4, Moscow 119049, Russia
Ivan V. Shchemerov: Department of Semiconductor Electronics and Physics of Semiconductors, National University of Science and Technology MISIS, Leninsky pr. 4, Moscow 119049, Russia
Andrej Kuznetsov: Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, N-0316 Oslo, Norway
Stephen J. Pearton: Department of Material Science and Engineering, University of Florida, Gainesville, FL 32611, USA

DOI: https://doi.org/10.3390/cryst13091400
Journal volume & issue: Vol. 13, no. 9
p. 1400

Abstract

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In this study, the results of hydrogen plasma treatments of β-Ga2O3, α-Ga2O3, κ-Ga2O3 and γ-Ga2O3 polymorphs are analyzed. For all polymorphs, the results strongly suggest an interplay between donor-like hydrogen configurations and acceptor complexes formed by hydrogen with gallium vacancies. A strong anisotropy of hydrogen plasma effects in the most thermodynamically stable β-Ga2O3 are explained by its low-symmetry monoclinic crystal structure. For the metastable, α-, κ- and γ-polymorphs, it is shown that the net result of hydrogenation is often a strong increase in the density of centers supplying electrons in the near-surface regions. These centers are responsible for prominent, persistent photocapacitance and photocurrent effects.

Published in Crystals

ISSN: 2073-4352 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Crystallography
Website: http://www.mdpi.com/journal/crystals/

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