Laser-Activated Second Harmonic Generation in Flexible Membrane with Si Nanowires
Viktoriia Mastalieva,
Vladimir Neplokh,
Arseniy Aybush,
Vladimir Fedorov,
Anastasiya Yakubova,
Olga Koval,
Alexander Gudovskikh,
Sergey Makarov,
Ivan Mukhin
Affiliations
Viktoriia Mastalieva
Center of Nanotechnology, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
Vladimir Neplokh
Center of Nanotechnology, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
Arseniy Aybush
N.N. Semenov Federal Research Center for Chemical Physics, Russian Academy of Sciences, Kosygin Street 4, 119991 Moscow, Russia
Vladimir Fedorov
Center of Nanotechnology, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
Anastasiya Yakubova
Center of Nanotechnology, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
Olga Koval
Moscow Institute of Physics and Technology, Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, 141701 Dolgoprudny, Russia
Alexander Gudovskikh
Center of Nanotechnology, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
Sergey Makarov
School Department of Physics and Engineering, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia
Ivan Mukhin
Center of Nanotechnology, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
Nonlinear silicon photonics has a high compatibility with CMOS technology and therefore is particularly attractive for various purposes and applications. Second harmonic generation (SHG) in silicon nanowires (NWs) is widely studied for its high sensitivity to structural changes, low-cost fabrication, and efficient tunability of photonic properties. In this study, we report a fabrication and SHG study of Si nanowire/siloxane flexible membranes. The proposed highly transparent flexible membranes revealed a strong nonlinear response, which was enhanced via activation by an infrared laser beam. The vertical arrays of several nanometer-thin Si NWs effectively generate the SH signal after being exposed to femtosecond infrared laser irradiation in the spectral range of 800–1020 nm. The stable enhancement of SHG induced by laser exposure can be attributed to the functional modifications of the Si NW surface, which can be used for the development of efficient nonlinear platforms based on silicon. This study delivers a valuable contribution to the advancement of optical devices based on silicon and presents novel design and fabrication methods for infrared converters.
