IEEE Access (Jan 2017)

Role of Self-Heating and Polarization in AlGaN/GaN-Based Heterostructures

  • Khaled Ahmeda,
  • Brendan Ubochi,
  • Brahim Benbakhti,
  • Steven J. Duffy,
  • Ali Soltani,
  • Wei Dong Zhang,
  • Karol Kalna

DOI
https://doi.org/10.1109/ACCESS.2017.2755984
Journal volume & issue
Vol. 5
pp. 20946 – 20952

Abstract

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The interplay of self-heating and polarization affecting resistance is studied in AlGaN/GaN transmission line model (TLM) heterostructures with a scaled source-to-drain distance. This paper is based on meticulously calibrated TCAD simulations against I-V experimental data using an electro-thermal model. The electro-thermal simulations show hot-spots (with peak temperature in a range of ~566 K-373 K) at the edge of the drain contact due to a large electric field. The electrical stress on Ohmic contacts reduces the total polarization, leading to the inverse/converse piezoelectric effect. This inverse effect decreases the polarization by 7%, 10%, and 17% during a scaling of the source-to-drain distance in the 12 μm, 8 μm, and 4 μm TLM heterostructures, respectively, when compared with the largest 18-μm heterostructure.

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