Temperature-Dependent Optical Behaviors and Demonstration of Carrier Localization in Polar and Semipolar AlGaN Multiple Quantum Wells

Ping Ouyang; Kunzi Liu; Jiaxin Zhang; Qiushuang Chen; Liqiong Deng; Long Yan; Jason Hoo; Shiping Guo; Li Chen; Wei Guo; Jichun Ye

doi:10.3390/cryst13071076

Crystals (Jul 2023)

Temperature-Dependent Optical Behaviors and Demonstration of Carrier Localization in Polar and Semipolar AlGaN Multiple Quantum Wells

Ping Ouyang,
Kunzi Liu,
Jiaxin Zhang,
Qiushuang Chen,
Liqiong Deng,
Long Yan,
Jason Hoo,
Shiping Guo,
Li Chen,
Wei Guo,
Jichun Ye

Affiliations

Ping Ouyang: Faculty of Materials Science and Chemical Engineering, Ningbo University, Ningbo 315211, China
Kunzi Liu: Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Jiaxin Zhang: Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Qiushuang Chen: Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Liqiong Deng: Faculty of Materials Science and Chemical Engineering, Ningbo University, Ningbo 315211, China
Long Yan: Advanced Micro-Fabrication Equipment Inc., Shanghai 201201, China
Jason Hoo: Advanced Micro-Fabrication Equipment Inc., Shanghai 201201, China
Shiping Guo: Advanced Micro-Fabrication Equipment Inc., Shanghai 201201, China
Li Chen: Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Wei Guo: Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Jichun Ye: Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

DOI: https://doi.org/10.3390/cryst13071076
Journal volume & issue: Vol. 13, no. 7
p. 1076

Abstract

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Semipolar AlGaN multiple quantum wells (MQWs) have unique advantages in deep ultraviolet light emitters due to the weak Quantum-Confined Stark Effect. However, their applications are hampered by the poor crystalline quality of semipolar AlGaN thin films. Different treatments were developed to improve the crystal quality of semipolar AlGaN, including a multistep in situ thermal annealing technique proposed by our group. In this work, temperature-dependent and time-resolved photoluminescence characterizations were performed to reveal the carrier localization in the MQW region. The degree of carrier localization in semipolar AlGaN MQWs grown on top of the in situ-annealed AlN is similar to that of conventional ex situ face-to-face annealing, both of which are significantly stronger than that of the c-plane counterpart. Moreover, MQWs on in situ-annealed AlN show drastically reduced dislocation densities, demonstrating its great potential for the future development of high-efficiency optoelectronic devices.

Published in Crystals

ISSN: 2073-4352 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Crystallography
Website: http://www.mdpi.com/journal/crystals/

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