Detection and analysis of random telegraph signal noise in P-MOSFET

Abstract

Power metal oxide semiconductor FET(P-MOSFET)is the core device that forms the power communication power，its reliability directly affects the safe and stable operation of power communication. Random telegraph signal(RTS) noise is a sensitive parameter to characterize its reliability. In order to be able to detect and analyze RTS noise inside P-MOSFET，an improved empirical mode decomposition(EMD) adaptive selection algorithm is proposed to detect RTS noise, the RTS noise is analyzed by using time and waveform correlation coefficient. Simulation results show that the new algorithm has better filtering effect than traditional algorithm, the optimized high order cumulant not only improves RTS noise processing capability, but also proves that it has 1/f at zero frequency.

Keywords

• P-MOSFET
• RTS noise
• high order cumulant
• normalization cross correlation
• EMD algorithm