Tunable Dynamic Black Phosphorus/Insulator/Si Heterojunction Direct-Current Generator Based on the Hot Electron Transport
Yanghua Lu,
Sirui Feng,
Runjiang Shen,
Yujun Xu,
Zhenzhen Hao,
Yanfei Yan,
Haonan Zheng,
Xutao Yu,
Qiuyue Gao,
Panpan Zhang,
Shisheng Lin
Affiliations
Yanghua Lu
College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Sirui Feng
College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Runjiang Shen
College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Yujun Xu
College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Zhenzhen Hao
College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Yanfei Yan
College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Haonan Zheng
College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Xutao Yu
College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Qiuyue Gao
College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Panpan Zhang
College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Shisheng Lin
College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China; State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China
Static heterojunction-based electronic devices have been widely applied because carrier dynamic processes between semiconductors can be designed through band gap engineering. Herein, we demonstrate a tunable direct-current generator based on the dynamic heterojunction, whose mechanism is based on breaking the symmetry of drift and diffusion currents and rebounding hot carrier transport in dynamic heterojunctions. Furthermore, the output voltage can be delicately adjusted and enhanced with the interface energy level engineering of inserting dielectric layers. Under the ultrahigh interface electric field, hot electrons will still transfer across the interface through the tunneling and hopping effect. In particular, the intrinsic anisotropy of black phosphorus arising from the lattice structure produces extraordinary electronic, transport, and mechanical properties exploited in our dynamic heterojunction generator. Herein, the voltage of 6.1 V, current density of 124.0 A/m2, power density of 201.0 W/m2, and energy-conversion efficiency of 31.4% have been achieved based on the dynamic black phosphorus/AlN/Si heterojunction, which can be used to directly and synchronously light up light-emitting diodes. This direct-current generator has the potential to convert ubiquitous mechanical energy into electric energy and is a promising candidate for novel portable and miniaturized power sources in the in situ energy acquisition field.