Nature Communications (Oct 2022)

The gate injection-based field-effect synapse transistor with linear conductance update for online training

  • Seokho Seo,
  • Beomjin Kim,
  • Donghoon Kim,
  • Seungwoo Park,
  • Tae Ryong Kim,
  • Junkyu Park,
  • Hakcheon Jeong,
  • See-On Park,
  • Taehoon Park,
  • Hyeok Shin,
  • Myung-Su Kim,
  • Yang-Kyu Choi,
  • Shinhyun Choi

DOI
https://doi.org/10.1038/s41467-022-34178-9
Journal volume & issue
Vol. 13, no. 1
pp. 1 – 10

Abstract

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The conventional von Neumann computing architecture is ill suited to data intensive tasks as data must be repeated moved between the separated processing and memory units. Here, Seo et al propose a CMOS compatible, highly linear gate injection field-effect transistor where data can be both stored and processed.