High energy storage performance in lead-free BiFeO3-BaTiO3 ferroelectric thin film fabricated by pulsed laser deposition

Yuqing Hu; Qingxiu Xie; Ruihong Liang; Xiangyong Zhao; Zhiyong Zhou; Xianlin Dong; Feifei Wang; Yanxue Tang; Ningtao Liu; Xing Liu

doi:10.1063/1.5100928

AIP Advances (Aug 2019)

High energy storage performance in lead-free BiFeO3-BaTiO3 ferroelectric thin film fabricated by pulsed laser deposition

Yuqing Hu,
Qingxiu Xie,
Ruihong Liang,
Xiangyong Zhao,
Zhiyong Zhou,
Xianlin Dong,
Feifei Wang,
Yanxue Tang,
Ningtao Liu,
Xing Liu

Affiliations

Yuqing Hu: Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China
Qingxiu Xie: Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China
Ruihong Liang: Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
Xiangyong Zhao: Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China
Zhiyong Zhou: Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
Xianlin Dong: Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
Feifei Wang: Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China
Yanxue Tang: Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China
Ningtao Liu: Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
Xing Liu: Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education School of Materials Science and Engineering, Tongji University, Shanghai 201804, China

DOI: https://doi.org/10.1063/1.5100928
Journal volume & issue: Vol. 9, no. 8
pp. 085005 – 085005-5

Abstract

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In this work, the 0.68BiFeO3-0.32BaTiO3 (BFBT) ferroelectric thin film was fabricated with high maximum polarization for energy storage applications. BFBT thin film with pure perovskite phase was deposited on Pt/Ti/SiO2/Si substrates at 600°C by Pulsed Laser Deposition (PLD) method. We measured the ferroelectric hysteresis, dielectric properties and the fatigue performance of the BFBT thin film with thickness of about 200 nm. It was found that the film has a high maximum field-induced polarization value of 86 μC/cm2. Under an applied low electric field of 900 kV/cm, the recoverable energy density (Ure) could reach up to 19 J/cm3, and the energy efficiency (η) is around 51% at room temperature. Furthermore, the film shows outstanding fatigue endurance even after 1×107 cycles. All results suggest that lead-free BFBT ferroelectric thin film is very promising energy storage materials.

Published in AIP Advances

ISSN: 2158-3226 (Online)
Publisher: AIP Publishing LLC
Country of publisher: United States
LCC subjects: Science: Physics
Website: http://aipadvances.aip.org/

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