High energy storage performance in lead-free BiFeO3-BaTiO3 ferroelectric thin film fabricated by pulsed laser deposition
Yuqing Hu,
Qingxiu Xie,
Ruihong Liang,
Xiangyong Zhao,
Zhiyong Zhou,
Xianlin Dong,
Feifei Wang,
Yanxue Tang,
Ningtao Liu,
Xing Liu
Affiliations
Yuqing Hu
Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China
Qingxiu Xie
Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China
Ruihong Liang
Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
Xiangyong Zhao
Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China
Zhiyong Zhou
Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
Xianlin Dong
Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
Feifei Wang
Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China
Yanxue Tang
Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China
Ningtao Liu
Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
Xing Liu
Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education School of Materials Science and Engineering, Tongji University, Shanghai 201804, China
In this work, the 0.68BiFeO3-0.32BaTiO3 (BFBT) ferroelectric thin film was fabricated with high maximum polarization for energy storage applications. BFBT thin film with pure perovskite phase was deposited on Pt/Ti/SiO2/Si substrates at 600°C by Pulsed Laser Deposition (PLD) method. We measured the ferroelectric hysteresis, dielectric properties and the fatigue performance of the BFBT thin film with thickness of about 200 nm. It was found that the film has a high maximum field-induced polarization value of 86 μC/cm2. Under an applied low electric field of 900 kV/cm, the recoverable energy density (Ure) could reach up to 19 J/cm3, and the energy efficiency (η) is around 51% at room temperature. Furthermore, the film shows outstanding fatigue endurance even after 1×107 cycles. All results suggest that lead-free BFBT ferroelectric thin film is very promising energy storage materials.
