Nature Communications (Jul 2021)
An ultrasensitive molybdenum-based double-heterojunction phototransistor
- Shun Feng,
- Chi Liu,
- Qianbing Zhu,
- Xin Su,
- Wangwang Qian,
- Yun Sun,
- Chengxu Wang,
- Bo Li,
- Maolin Chen,
- Long Chen,
- Wei Chen,
- Lili Zhang,
- Chao Zhen,
- Feijiu Wang,
- Wencai Ren,
- Lichang Yin,
- Xiaomu Wang,
- Hui-Ming Cheng,
- Dong-Ming Sun
Affiliations
- Shun Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Chi Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Qianbing Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Xin Su
- National Laboratory of Solid State Microstructures, School of Physics, School of Electronic Science and Engineering, Collaborative Innovation Centre of Advanced Microstructures, Nanjing University
- Wangwang Qian
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Yun Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Chengxu Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Bo Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Maolin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Long Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Wei Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Lili Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Chao Zhen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Feijiu Wang
- Henan Key Laboratory of Photovoltaic Materials, Henan University
- Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Lichang Yin
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Xiaomu Wang
- National Laboratory of Solid State Microstructures, School of Physics, School of Electronic Science and Engineering, Collaborative Innovation Centre of Advanced Microstructures, Nanjing University
- Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
- DOI
- https://doi.org/10.1038/s41467-021-24397-x
- Journal volume & issue
-
Vol. 12,
no. 1
pp. 1 – 8
Abstract
Here, the authors exploit a photo-induced barrier-lowering mechanism in MoS2/ α-MoO3-x heterojunctions to realize two-dimensional phototransistors with enhanced performance and fast response at low bias voltage.
