Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов (Dec 2017)

A mathemetical model of the charge accumulation and the spectrum formation in detectors on the basis of CdTe (CdZnTe) at the gamma-quanta irradiation

  • A.A. Smirnov,
  • I.A. Kaplunov,
  • A.A. Ol’nev,
  • A.N. Nikiforova

DOI
https://doi.org/10.26456/pcascnn/2017.9.465
Journal volume & issue
no. 9
pp. 465 – 474

Abstract

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The features of spectrum formation in CdTe (CdZnTe) detectors under gamma quanta radiation are presented. The main characteristics of a semiconductor detector, i.e. the energy resolution and the registration efficiency, are determined. The results can be used as a basis for physical and mathematical models of operation of CdTe (CdZnTe) semiconductor detectors for registration of gamma- and x-ray radiation over a wide energy range.

Keywords