Indium selenide film: a promising saturable absorber in 3- to 4-μm band for mid-infrared pulsed laser
Hai Ting,
Xie Guoqiang,
Qiao Zhen,
Qin Zhipeng,
Ma Jie,
Sun Yue,
Wang Fengqiu,
Yuan Peng,
Ma Jingui,
Qian Liejia
Affiliations
Hai Ting
School of Physics and Astronomy, Key Laboratory for Laser Plasmas (Ministry of Education), Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai 200240, China
Xie Guoqiang
School of Physics and Astronomy, Key Laboratory for Laser Plasmas (Ministry of Education), Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai 200240, China
Qiao Zhen
School of Physics and Astronomy, Key Laboratory for Laser Plasmas (Ministry of Education), Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai 200240, China
Qin Zhipeng
School of Physics and Astronomy, Key Laboratory for Laser Plasmas (Ministry of Education), Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai 200240, China
Ma Jie
Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
Sun Yue
School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Wang Fengqiu
School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Yuan Peng
School of Physics and Astronomy, Key Laboratory for Laser Plasmas (Ministry of Education), Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai 200240, China
Ma Jingui
School of Physics and Astronomy, Key Laboratory for Laser Plasmas (Ministry of Education), Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai 200240, China
Qian Liejia
School of Physics and Astronomy, Key Laboratory for Laser Plasmas (Ministry of Education), Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai 200240, China
Indium selenide (InSe) film, an emerging two-dimensional chalcogenide semiconductor, has recently attracted growing interests in optoelectronics. However, its nonlinear characteristics and application potentials in mid-infrared (IR) region remain open, which is a very attractive but undeveloped spectral region currently. In this work, it is demonstrated that InSe film possesses excellent nonlinear absorption properties in 3- to 4-μm band. Saturable absorption measurements of InSe film at 2.8 and 3.5 μm show very low saturation energy fluences and moderate modulation depths. Pump–probe measurements at 3 and 4 μm indicate that InSe film has ultrafast responses in mid-IR region. Furthermore, the application of InSe film in mid-IR pulsed laser is demonstrated, and stable Q-switching operation of fiber laser at 2.8 μm is realized. These results show that InSe film is a promising saturable absorber for mid-IR pulsed laser.
