A single-electron probe for buried optically active quantum dot

Abstract

We present a simple method that enables both single electron transport through a self-assembled quantum dot and photon emission from the dot. The quantum dot buried in a semiconductor matrix is electrically connected with nanogap electrodes through tunneling junctions formed by a localized diffusion of the nanogap electrode metals. Coulomb blockade stability diagrams for the optically-active dot are clearly resolved at 4.2 K. The position of the quantum dot energy levels with respect to the contact Fermi level is controlled by the kind of metal atoms diffused from the nanogap electrodes.