THE USE OF POROUS ANODIC OXIDE OF SILICON IN THE PRODUCTION OF SEMICONDUCTOR DEVICES

Abstract

The article describes the technological processes for manufacturing high-voltage diodes, varicaps and Schottky diodes using layers of porous anodic oxide of silicon. It is shown that the growth features of anodic oxide of silicon at an increased voltage makes it possible to significantly improve the set of parameters and characteristics of both devices with p-n junctions and Schottky diodes.

Keywords

• porous anodic oxide of silicon
• varicap
• Schottky diode