Nature Communications (Apr 2018)

Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature

  • Shuren Lin,
  • Alexandra Carvalho,
  • Shancheng Yan,
  • Roger Li,
  • Sujung Kim,
  • Aleksandr Rodin,
  • Lídia Carvalho,
  • Emory M. Chan,
  • Xi Wang,
  • Antonio H. Castro Neto,
  • Jie Yao

DOI
https://doi.org/10.1038/s41467-018-03897-3
Journal volume & issue
Vol. 9, no. 1
pp. 1 – 7

Abstract

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Valleytronics leverages the valley degree of freedom to engineer light-matter interaction. Here, the authors demonstrate a room temperature, bias-free valley effect in bulk SnS by means of spectroscopic measurements, previously unattainable using atomically thin transition metal dichalcogenides.